Excellent Scalability Including Self-Heating Phenomena of Vertical-Channel Field-Effect-Diode (FED) Type Capacitorless One Transistor DRAM Cell
نویسندگان
چکیده
Abstract The excellent scalability of the vertical channel Field Effect Diode (FED) type 1T-DRAM including Self-Heating Effect (SHE) is presented for the first time. The vertical channel FED type shows the excellent hold characteristics (100msec at 358K) even when silicon pillar diameter is scaled down to 12nm. Moreover, we also show that by employing the vertical FED type, increase of lattice temperature due to SHE (∆ ) can be suppressed to a negligible small value of 0.6K.
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